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NEC's 3W, L&S-BAND
MEDIUM POWER GaAs HJ-FET
NE6510179A
FEATURES
? LOW COST PLASTIC SURFACE MOUNT PACKAGE
Available on Tape and Reel
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE 79A
? USABLE TO 3.7 GHz:
Fixed Wireless Access, ISM, WLL, MMDS, IMT-2000,
4.2 MAX
Source
1.5 – 0.2
Source
PCS
Gate
Drain
Gate
Drain
? HIGH OUTPUT POWER:
35 dBm TYP with 5.0 V Vdc
32.5 dBm TYP with 3.5 V Vdc
? HIGH LINEAR GAIN:
10 dB TYP at 1.9 GHz
? LOW THERMAL RESISTANCE:
0.4 – 0.15
5.7 MAX
0.8 MAX
3.6 – 0.2
5 ° C/W
DESCRIPTION
NEC's NE6510179A is a GaAs HJ-FET designed for medium
power mobile communications, Fixed Wireless Access, ISM,
WLL, PCS, IMT-2000, and MMDS transmitter and subscriber
applications. It is capable of delivering 1.8 watts of output
power(C/W) at 3.5 V and 3 Watts of ouptut power (CW) at 5 V
with high linear gain, high efficiency, and excellent linearity.
Reliability and performance uniformity are assured by NEC's
stringent quality and control procedures.
BOTTOM VIEW
Note: Unless otherwise specified, tolerance is ± 0.2 mm
ELECTRICAL CHARACTERISTICS (T C
PART NUMBER
PACKAGE OUTLINE
= 25 ° C)
NE6510179A
79A
SYMBOLS
P OUT
G L
η ADD
CHARACTERISTICS
Output Power
Linear Gain 1
Power Added Efficiency
UNITS
dBm
dB
%
MIN
31.5
50
TYP
32.5
10.0
58
MAX
TEST CONDITIONS
f = 1900 MHz, V DS = 3.5 V,
Pin = +25 dBm, Rg = 100 ?
I DSQ = 200 mA (RF OFF) 2
I D
Drain Current
A
0.72
I DSS
Saturated Drain Current
A
2.4
V DS = 2.5 V; V GS = 0 V
V P
R TH
BV GD
Pinch-Off Voltage
Thermal Resistance
Gate to Drain Breakdown Voltage
V
° C/W
V
-2.0
12
5
-0.4
8
V DS = 2.5 V; I D = 14 mA
Channel to Case
I GD = 14 mA
Notes:
1. Pin = 0 dBm
2. DC performance is tested 100% . Several samples per wafer are tested for RF performance. Wafer rejection criteria for standard devices is 1
reject for several samples.
California Eastern Laboratories
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相关代理商/技术参数
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NE6510379A-T1 制造商:NEC 制造商全称:NEC 功能描述:3 W L-BAND POWER GaAs HJ-FET
NE651R479A 功能描述:射频GaAs晶体管 L&S Band GaAs HJFET RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体:
NE651R479A-A 功能描述:射频GaAs晶体管 L&S Band GaAs HJFET RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体:
NE651R479A-EVPW19 功能描述:射频GaAs晶体管 For NE651R479A-A Power at 1.9 GHz RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体:
NE651R479A-EVPW24 功能描述:射频GaAs晶体管 For NE651R479A-A Power at 2.4 GHz RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: